View BFQ149_107830.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ149 PNP 5 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DESCRIPTION PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers (30 to 860 MHz) and in microwave amplifiers such as radar systems, spectrum analyzers, etc., using SMD technology. PINNING PIN 1 2 3 DESCRIPTION Code: FG emitter collector base
1 Bottom view 2
fpage
BFQ149
3
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM F PARAMETER collector-emitter voltage DC collector current total power dissipation DC current gain transition frequency maximum unilateral power gain noise figure up to Ts = 135 C (note 1) IC = -75 mA; VCE = -10 V; f = 500 MHz; Tj = 25 C IC = -50 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -50 mA; VCE = -10 V; Rs = 60 ; f = 500 MHz; Tamb = 25 C open base CONDITIONS MIN. - - - 4 - - IC = -70 mA; VCE = -10 V; Tj = 25 C 20 TYP. - - - 50 5 12 3.75 MAX. -15 -100 1 - - - - GHz dB dB UNIT V mA W
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 135 C (note 1) open base open collector CONDITIONS open emitter - - - - - - -65 - MIN. MAX. -20 -15 -3 -100 -150 1 150 150 UNIT V V V mA mA W C C
September 1995
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM F PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain (note 1) noise figure CONDITIONS IE = 0; VCB = -10 V; IC = -70 mA; VCE = -10 V IC = -70 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IE = 0; VCB = -10 V; f = 1 MHz IC = 0; VEB = -0.5 V; f = 1 MHz IC = 0; VCE = -10 V; f = 1 MHz IC = -50 mA; VCE = -10 V; f = 500 MHz; Tamb = 25 C IC = -50 mA; VCE = -10 V; Rs = 60 ; f = 500 MHz; Tamb = 25 C PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 135 C (note 1)
BFQ149
THERMAL RESISTANCE 40 K/W
MIN. TYP. MAX. - 20 4 - - - - - - 50 5 2 4 1.7 12 3.75 100 - - - - - - -
UNIT nA GHz pF pF pF dB dB
Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22
2
September 1995
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFQ149
MEA328
handbook, halfpage
4
handbook, halfpage
8
MBB347
Cc (pF) 3
fT (GHz) 6
2
4
1
2
0 0 10 V CB (V) 20
0 0 50 I C (mA) 100
IE = 0; f = 1 MHz; Tj = 25 C.
VCE = -10 V; f = 500 MHz; Tamb = 25 C.
Fig.2
Collector capacitance as a function of collector-base voltage.
Fig.3
Transition frequency as a function of collector current.
MBB345
handbook, halfpage
80
MEA329
handbook, halfpage
40
h FE 60
G UM (dB) 30
40
20
20
10
0 0 100 I C (mA) 200
0 10 10
2
103
f (MHz)
10
4
VCE = -10 V; Tj = 25 C.
Ic = -50 mA; VCE = -10 V; Tamb = 25 C.
Fig.4
DC current gain as a function of collector current.
Fig.5
Maximum unilateral power gain as a function of frequency.
September 1995
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BFQ149
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
wM
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
September 1995
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ149
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
6

▲Up To Search▲

Price & Availability of BFQ149

	To Download BFQ149 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .